Search results for "Device fabrication"

Design, fabrication, and analysis of a spin-valve based current sensor

2004

Abstract In this work, we suggest a novel current sensor design, based on spin valve technology, with a full Wheatstone bridge configuration. The principal characteristic is that the four magnetoresistance sensing elements, fully active, are deposited and patterned at the same time. This way, differences among them should be insignificant, so improving voltage offset and drift temperature parameters. The complete IC fabrication process involves only three lithography steps, making the process cheaper and faster. In order to get a balanced bridge, the measured current must be properly driven, by means of an auxiliary PCB. Some prototypes, with different input impedances, have been fabricated…

2015

Electrically detected magnetic resonance (EDMR) is a commonly used technique for the study of spin-dependent transport processes in semiconductor materials and electro-optical devices. Here, we present the design and implementation of a compact setup to measure EDMR, which is based on a commercially available benchtop electron paramagnetic resonance (EPR) spectrometer. The electrical detection part uses mostly off-the-shelf electrical components and is thus highly customizable. We present a characterization and calibration procedure for the instrument that allowed us to quantitatively reproduce results obtained on a silicon-based reference sample with a “large-scale” state-of-the-art instru…

Light absorption and conversion in solar cell based on Si:O alloy

2013

Thin film Si:O alloys have been grown by plasma enhanced chemical vapor deposition, as intrinsic or highly doped (1 to 5 at. % of B or P dopant) layers. UV-visible/near-infrared spectroscopy revealed a great dependence of the absorption coefficient and of the optical gap (Eg) on the dopant type and concentration, as Eg decreases from 2.1 to 1.9 eV, for the intrinsic or highly p-doped sample, respectively. Thermal annealing up to 400 °C induces a huge H out-diffusion which causes a dramatic absorption increase and a reduction of Eg, down to less than 1.8 eV. A prototypal solar cell has been fabricated using a 400 nm thick, p-i-n structure made of Si:O alloy embedded within flat transparent c…

Efficiency enhancement of organic light emitting diodes by NaOH surface treatment of the ITO anode

2009

Abstract Organic light emitting diodes (OLEDs) based on tris-(8-idroxyquinoline)aluminum (Alq 3 ) with enhanced efficiency are reported here. This is obtained by improving the charge carrier balance, through a preliminary NaOH surface treatment of the indium tin oxide (ITO) anode, in order to decrease its work function and, consequently, reduce the hole injection. The obtained devices exhibit a 1.36% external quantum efficiency and a 1.2 lm/W power efficiency at a current density of 60 mA/cm 2 . These values are more than double as compared with those of identical reference devices fabricated without the preliminary NaOH surface treatment.

Development of niobium-based superconducting junctions

2012

This thesis presents a review of publications which mainly focuses on the fabrication and performance of Nb-based normal metal-insulator-superconductor (NIS) tunnel junctions and superconductor-normal metal-superconductor (SNS) Josephson junctions at low temperatures. The Cu/AlOx-Al/Nb based NIS double tunnel junctions were successfully fabricated using conventional electron beam lithography combined with multi-angle thermal evaporation of metals in ultra high vacuum. The subgap characteristics of these junctions showed expected temperature dependence from 0.2 K to 5 K with a good thermometry sensitivity 0.2-0.3 mV/K. Signatures of small electronic cooling effects were observed near the Nb …